660NM WAVELENGTH GAINASP ALGAAS DISTRIBUTED FEEDBACK LASERS

被引:10
作者
CHONG, T
KISHINO, K
机构
[1] Sophia Univ, Japan
关键词
D O I
10.1049/el:19880282
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
6
引用
收藏
页码:416 / 418
页数:3
相关论文
共 8 条
[1]   FABRICATION AND LASING CHARACTERISTICS OF 0.67 MU-M GAINASP/ALGAAS VISIBLE LASERS PREPARED BY LIQUID-PHASE EPITAXY ON (100) GAAS SUBSTRATES [J].
KISHINO, K ;
HARADA, A ;
KANEKO, Y .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (02) :180-187
[2]   ALGAINP DOUBLE HETEROSTRUCTURE VISIBLE-LIGHT LASER-DIODES WITH A GAINP ACTIVE LAYER GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].
KOBAYASHI, K ;
HINO, I ;
GOMYO, A ;
KAWATA, S ;
SUZUKI, T .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (06) :704-711
[3]   ALGAAS/GAAS VISIBLE DISTRIBUTED FEEDBACK LASER OPERATING AT 770 NM [J].
NAKANO, Y ;
LUO, Y ;
TADA, K .
ELECTRONICS LETTERS, 1987, 23 (25) :1342-1343
[4]  
SAITOH T, 1982, IEICE JAPAN, V82, P7
[5]  
SAITOH T, 1982, IEICE JAPAN, V82, P9
[6]  
SUEMATSU Y, 1983, J LIGHTWAVE TECHNOL, V1, P161
[7]  
TAKIGUCHI H, 1986, IEICE JAPAN, V86, P31
[8]  
TAKIGUCHI H, 1986, IEICE JAPAN, V86, P65