HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF THE AG/MGO INTERFACE

被引:126
作者
TRAMPERT, A
ERNST, F
FLYNN, CP
FISCHMEISTER, HF
RUHLE, M
机构
[1] UNIV ILLINOIS, DEPT PHYS, URBANA, IL 61801 USA
[2] UNIV ILLINOIS, MAT RES LAB, URBANA, IL 61801 USA
来源
ACTA METALLURGICA ET MATERIALIA | 1992年 / 40卷 / SUPPL期
关键词
Crystal atomic structure - Crystal defects - Crystal lattices - Crystal orientation - Dislocations (crystals) - Interfacial energy - Magnesia - Mathematical models - Molecular beam epitaxy - Silver - Transmission electron microscopy;
D O I
10.1016/0956-7151(92)90281-I
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ag layers with a thickness of 100 nm were deposited on {100} MgO substrates by molecular beam epitaxy (MBE). The substrates were produced by cleaving MgO single crystals and subsequent annealing in ultra high vacuum. X-ray texture measurements indicate a preferential orientation of Ag {100} planes parallel to the {100} surface of the MgO substrate. The atomistic structure of the Ag/MgO interface was imaged by high resolution transmission electron microscopy (HRTEM). Lattice images of Ag and MgO in parallel orientation show structural defects and lattice strain at the Ag/MgO interface, which are introduced by the lattice mismatch of 3% between Ag and MgO. The atomic resolution images are compared with the computer-simulated lattice image of a model structure. Finally our atomistic model of the Ag/MgO interface, which includes a misfit dislocation network is discussed in connection with theoretically calculated interfacial energies.
引用
收藏
页码:S227 / S236
页数:10
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