CONTROLLED PHOTON-EMISSION IN POROUS SILICON MICROCAVITIES

被引：110

作者：

PAVESI, L

MAZZOLENI, C

TREDICUCCI, A

PELLEGRINI, V

机构：

[1] UNIV TRENT,DIPARTIMENTO FIS,I-38050 TRENT,ITALY

[2] SCUOLA NORMALE SUPER PISA,I-56126 PISA,ITALY

[3] INFM,I-56126 PISA,ITALY

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 22期

关键词：

D O I：

10.1063/1.115220

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the preparation of narrow-band porous-silicon reflectors integrated on porous-silicon layers by electrochemical etching. By carefully tuning the resulting photon cavity mode around the maximum of the porous silicon photoluminescence, we have obtained both a narrowing and enhancement of the emission line, and a highly concentrated radiation pattern. These results show that the porous silicon spontaneous emission is modified because of the coupling with the photon cavity mode. (C) 1995 American Institute of Physics.

引用

页码：3280 / 3282

页数：3

共 18 条

[1] Canham L.T., Appl. Phys. Lett., 57, (1990)
[2] Peng C., Fauchet P.M., Rehm J.M., McLendon G.L., Seiferth F., Kurinec S.K., Appl. Phys. Lett., 64, (1994)
[3] Pellegrini V., Fuso F., Lorenzi G., Allegrini M., Diligenti A., Nannini A., Pennelli G., Appl. Phys. Lett., 67, (1995)
[4] Chanam L.T., Cullis A.G., Pickering G., Dosser O.D., Cox T.I., Lynch T.P., Nature, 368, (1994)
[5] Ben-Choren M., Kux A., Schechter I., Appl. Phys. Lett., 64, (1994)
[6] Xu J., Steckl A.J., IEEE Electron Device Lett., EDL-15, (1994)
[7] Koshida N., Koyama H., Yamamoto Y., Collins G.J., Appl. Phys. Lett., 63, (1993)
[8] Li K.H., Diaz D.C., He Y., Campbell J.C., Tsai C., Appl. Phys. Lett., 64, (1994)
[9] Steiner P., Kozlowski F., Lang W., Appl. Phys. Lett., 62, (1993)
[10] Pavesi L., Ceschini M., Mariotto G., Zanghellini E., Bisi O., Anderle M., Calliari L., Fedrizzi M., J. Appl. Phys., 75, (1994)

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