AB-INITIO CALCULATION OF THERMODYNAMIC PROPERTIES OF SILICON

被引:68
作者
WEI, SQ
LI, CL
CHOU, MY
机构
[1] School of Physics, Georgia Institute of Technology, Atlanta
来源
PHYSICAL REVIEW B | 1994年 / 50卷 / 19期
关键词
D O I
10.1103/PhysRevB.50.14587
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a fully ab initio calculation of the thermodynamic properties for silicon within the quasiharmonic approximation, making use of volume-dependent phonon frequencies obtained from pseudopotential local-density calculations. The temperature dependence of the thermal-expansion coefficient, specific heat (at constant volume), and other related quantities are studied. We confirm that the thermal-expansion coefficient behaves differently in three temperature regions: positive for temperature below 15 K, negative between 15 and 125 K, and positive again above 125 K. This finding agrees with experiment. The abnormal (negative) thermal-expansion coefficient at low temperatures is explained through a detailed study of mode Grüneisen parameters. Both specific-heat and thermal-expansion-coefficient values calculated are in excellent agreement with experiment up to a few hundred kelvin. © 1994 The American Physical Society.
引用
收藏
页码:14587 / 14590
页数:4
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