FORMATION ENERGIES OF A VACANCY IN PURE CU, CU-SI, CU-GA AND CU-GAMMAMN SOLID-SOLUTIONS BY POSITRON-ANNIHILATION

被引：35

作者：

FUKUSHIMA, H ^{[1
]}

DOYAMA, M ^{[1
]}

机构：

[1] UNIV TOKYO,FAC ENGN,DEPT MET & MAT SCI,BUNKYO KU,TOKYO 113,JAPAN

来源：

JOURNAL OF PHYSICS F-METAL PHYSICS | 1976年 / 6卷 / 05期

关键词：

D O I：

10.1088/0305-4608/6/5/011

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：677 / 685

页数：9

共 29 条

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[5] STUDIES OF VACANCIES AND VACANCY-IMPURITY PAIRS IN CU-0.5 AT PERCENT GE BY MEANS OF POSITRON-ANNIHILATION
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KURIBAYASHI, K
NANAO, S
TANIGAWA, S
[J]. APPLIED PHYSICS, 1974, 4 (02): : 153 - 156
[6] Doyama M., 1973, Crystal Lattice Defects, V4, P139
[7] Doyama M., 1973, Proceedings of the 2nd International Conference on the Properties of Liquid Metals, P629
[8] GALLAGHER PC, 1970, METALL TRANS, V1, P2429
[9] VACANCY-SILICON BINDING-ENERGY IN ALUMINUM BY POSITRON-ANNIHILATION
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BUYERS, WJL
MARTEL, P
HOOD, GM
[J]. JOURNAL OF PHYSICS F-METAL PHYSICS, 1974, 4 (03): : 343 - 350
[10] EVALUATION OF FORMATION ENTROPY OF A SINGLE VACANCY BY MEANS OF POSITRON-ANNIHILATION
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TANIGAWA, S
NANAO, S
DOYAMA, M
[J]. SOLID STATE COMMUNICATIONS, 1973, 12 (11) : 1179 - 1182