POLARIZED IR REFLECTIVITY OF CDGEAS2

被引：7

作者：

ARTUS, L

PASCUAL, J

CAMASSEL, J

机构：

[1] UNIV AUTONOMA BARCELONA,ICMAB,DEPT FIS,BARCELONA,SPAIN

[2] UNIV MONTPELLIER 2,ETUD SEMICOND GRP,F-34060 MONTPELLIER,FRANCE

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1990年 / 5卷 / 02期

关键词：

D O I：

10.1016/0921-5107(90)90061-F

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The polarized IR reflectivity of the ternary chalcopyrite semiconductor CdGeAs2 has been measured in the spectral region 50-500 cm-1 at room temperature. Five of the six Λ5 modes and two of the three Λ4 modes have been observed. The data have been analyzed ussing classical dispersion. The phonons are compared with those of GaAs and InAs. We have applied a Keating model to complete the experimental results published on both compounds. After comparison, it has been found that some modes of CdGeAs2 are close to GaAs, others are close to InAs and a third group are intermediate between both compounds. © 1990.

引用

页码：239 / 242

页数：4

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