CHARACTERIZATION OF SI/SIO2 INTERFACE DEFECTS BY ELECTRON-SPIN RESONANCE

被引：165

作者：

POINDEXTER, EH

CAPLAN, PJ

机构：

来源：

关键词：

D O I：

10.1016/0079-6816(83)90006-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：201 / 294

页数：94

共 81 条

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