A NEW DRIVING CIRCUIT FOR IGBT DEVICES

被引：45

作者：

LICITRA, C ^{[1
]}

MUSUMECI, S ^{[1
]}

RACITI, A ^{[1
]}

GALLUZZO, AU ^{[1
]}

LETOR, R ^{[1
]}

MELITO, M ^{[1
]}

机构：

[1] SGS THOMSON MICROELECTR,DEPT RES & DEV,CATANIA,ITALY

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 1995年 / 10卷 / 03期

关键词：

D O I：

10.1109/63.388004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

IGBT devices are increasingly used in power electronic equipment due to their high power handling capability, This paper deals with the problems that concern the turn-on, turn-off, and short-circuit of these devices, An optimal new driving circuit is proposed which gives excellent device output performances, Experimental oscillogram traces of transient condition tests are given, which demonstrate the advantages of using the new driving circuit, The suitability of the driving circuit for integration is analyzed.

引用

页码：373 / 378

页数：6

共 9 条

[1]

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[2]

FELDVOB M, 1991, JUN P POW CONV C PCM, P475

[3]

GALLUZZO A, 1991, JUN P POW CONV C PCM, P465

[4] An Investigation of the Drive Circuit Requirements for the Power Insulated Gate Bipolar Transistor (IGBT) [J].

Hefner, Allen R., Jr. .

IEEE TRANSACTIONS ON POWER ELECTRONICS, 1991, 6 (02) :208-219

[5]

LETOR R, 1990, OCT IND APPL SOC ANN, P1604

[6]

LETOR R, 1990, P POWER CONVERSION C, P25

[7]

MELITO M, 1990, P IEEE POW CONV INT, P153

[8]

MOURICK P, 1991, JUN P POW CONV C PCM, P460

[9]

TADROS Y, 1991, 4TH P EUR C POW EL A

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