ORIENTED GROWTH OF SEMICONDUCTORS .I. ORIENTATIONS IN GALLIUM ARSENIDE GROWN EPITAXIALLY ON GERMANIUM

被引：20

作者：

HOLLOWAY, H

WOLLMANN, K

JOSEPH, AS

机构：

来源：

PHILOSOPHICAL MAGAZINE | 1965年 / 11卷 / 110期

关键词：

D O I：

10.1080/14786436508221855

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：263 / &

共 9 条

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[5] STRUCTURE OF ORIENTED VAPOR-DEPOSITED GAAS FILMS STUDIED BY ELECTRON DIFFRACTION
MULLER, EK
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[6] ELECTRON MICROSCOPY AND DIFFRACTION OF TWINNED STRUCTURES IN EVAPORATED FILMS OF GOLD
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[J]. PHILOSOPHICAL MAGAZINE, 1963, 8 (94): : 1605 - &
[7] EPITAXY OF COMPOUND SEMICONDUCTORS BY FLASH EVAPORATION
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[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (11) : 3418 - &
[8] SANGSTER RC, 1962, COMPOUND SEMICONDUCT, V1, pCH28
[9] WILLARDSON RK, 1962, COMPOUND SEMICONDUCT, V1, pCH33