ION-BEAM PROCESSES IN SI

被引：24

作者：

HOLLAND, OW ^{[1
]}

NARAYAN, J ^{[1
]}

FATHY, D ^{[1
]}

机构：

[1] OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37830

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1985年 / 7-8卷 / MAR期

关键词：

D O I：

10.1016/0168-583X(85)90561-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：243 / 250

页数：8

共 15 条

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[7] SOLID-PHASE-EPITAXIAL GROWTH IN ION-IMPLANTED SILICON [J].

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HOLLAND, OW .

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[8] INTERFACE STRUCTURES DURING SOLID-PHASE-EPITAXIAL GROWTH IN ION-IMPLANTED SEMICONDUCTORS AND A CRYSTALLIZATION MODEL [J].

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[9] SOLID-PHASE-EPITAXIAL GROWTH AND FORMATION OF METASTABLE ALLOYS IN ION-IMPLANTED SILICON [J].

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[10]

Narayan J., 1984, Materials Letters, V2, P211, DOI 10.1016/0167-577X(84)90026-0

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