RESONANT TUNNELING IN THE FRACTIONAL QUANTUM HALL REGIME

The resonant tunneling through an impurity level between the edges of a Hall bar is studied based on the theory of edge excitations. We find that the peak tunneling current scales with the potential difference between the edges V(R)-V(L) = 2DELTA as I(t) approximately DELTA(g-1) at low temperatures (T << e* DELTA/2) and as I(t) approximately DELTAT(g-2) at high temperatures (T >> e* DELTA/2), with the exponent g being intimately related to the propagator of the charge carriers. These results can be used to experimentally probe internal structures of the fractional quantum Hall states by measuring g.