THERMAL-CONDUCTIVITY OF THIN SIO2-FILMS

被引：93

作者：

BROTZEN, FR ^{[1
]}

LOOS, PJ ^{[1
]}

BRADY, DP ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,HOUSTON,TX 77251

来源：

THIN SOLID FILMS | 1992年 / 207卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(92)90123-S

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

On the basis of a mathematical model developed here, thermal conductivities were determined in silicon oxide films of four thicknesses. The films were deposited by plasma-enhanced chemical vapor deposition on monocrystalline silicon substrates. Heat losses by convection and radiation were minimized. The conductivities of the films are significantly lower than those of bulk SiO2. As the film thickness decreases, the thermal conductivity is lowered considerably.

引用

页码：197 / 201

页数：5

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