ROOM TEMPERATURE OXIDATION OF SILICON DURING AND AFTER ETCHING

[1] STAIN FILMS ON SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 : 104 - 110

[2] ARCHER RJ, 1957, T ELECTROCHEM SOC, V104, P619

[3] ATALLA MM, 1960, PROPERTIES ELEMENTAL

[4] SURFACE BARRIERS AND SURFACE CONDUCTANCE [J]. PHYSICA, 1954, 20 (10): : 873 - 884

[5] BLASER JP, 1951, HELV PHYS ACTA, V24, P465

[6] BRATTAIN WH, 1953, AT&T TECH J, V32, P1

[7] THEORY OF THE OXIDATION OF METALS [J]. REPORTS ON PROGRESS IN PHYSICS, 1948, 12 : 163 - 184

[8] The cause of the colours shown during the oxidation of metallic copper [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-CONTAINING PAPERS OF A MATHEMATICAL AND PHYSICAL CHARACTER, 1927, 115 (772) : 570 - 588

[9] GATOS HC, 1960, PROPERTIES ELEMENTAL

[10] THE ADSORPTION OF OXYGEN ON CLEAN SILICON SURFACES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 13 (1-2) : 145 - 150

[1] STAIN FILMS ON SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 : 104 - 110

[2] ARCHER RJ, 1957, T ELECTROCHEM SOC, V104, P619

[3] ATALLA MM, 1960, PROPERTIES ELEMENTAL

[4] SURFACE BARRIERS AND SURFACE CONDUCTANCE [J]. PHYSICA, 1954, 20 (10): : 873 - 884

[5] BLASER JP, 1951, HELV PHYS ACTA, V24, P465

[6] BRATTAIN WH, 1953, AT&T TECH J, V32, P1

[7] THEORY OF THE OXIDATION OF METALS [J]. REPORTS ON PROGRESS IN PHYSICS, 1948, 12 : 163 - 184

[8] The cause of the colours shown during the oxidation of metallic copper [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-CONTAINING PAPERS OF A MATHEMATICAL AND PHYSICAL CHARACTER, 1927, 115 (772) : 570 - 588

[9] GATOS HC, 1960, PROPERTIES ELEMENTAL

[10] THE ADSORPTION OF OXYGEN ON CLEAN SILICON SURFACES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 13 (1-2) : 145 - 150