REFINEMENTS IN THE MEASUREMENT OF DEPLETED GENERATION LIFETIME

被引：11

作者：

EADES, WD

SHOTT, JD

SWANSON, RM

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 10期

关键词：

D O I：

10.1109/T-ED.1983.21286

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1274 / 1277

页数：4

共 12 条

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BRAUN, S ;

GRIMMEISS, HG .

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[2] DETERMINATION OF SURFACE-GENERATION AND BULK-GENERATION CURRENTS IN LOW-LEAKAGE SILICON MOS STRUCTURES [J].

BROTHERTON, SD ;

GILL, A .

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[3] EXACT MODELING OF TRANSIENT-RESPONSE OF AN MOS CAPACITOR [J].

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CHURCHILL, JN .

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[4]

EDER A, 1980, ASTM STP, V712, P93

[5]

HALL TM, 1981, THESIS STANFORD U ST

[6]

Nicollian E. H., 1982, MOS METAL OXIDE SEMI

[7] EFFECTS OF LATERAL SURFACE GENERATION ON MOS-C LINEAR-SWEEP AND C-T TRANSIENT CHARACTERISTICS [J].

PIERRET, RF ;

SMALL, DW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (04) :457-458

[8] LINEAR-SWEEP MOS-C TECHNIQUE FOR DETERMINING MINORITY CARRIER LIFETIMES [J].

PIERRET, RF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (07) :869-+

[9] MODIFIED LINEAR SWEEP TECHNIQUE FOR MOS-C GENERATION RATE MEASUREMENTS [J].

PIERRET, RF ;

SMALL, DW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) :1051-1052

[10] INTERPRETATION OF SURFACE AND BULK EFFECTS USING PULSED MIS CAPACITOR [J].

SCHRODER, DK ;

GULDBERG, J .

SOLID-STATE ELECTRONICS, 1971, 14 (12) :1285-+

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