TEM OBSERVATIONS OF THE GRAIN-BOUNDARIES IN A SEMICONDUCTING BARIUM-TITANATE THICK-FILM

被引:3
作者
KOUMOTO, K [1 ]
TAGAWA, H [1 ]
NAKANO, T [1 ]
TAKEDA, S [1 ]
YANAGIDA, H [1 ]
机构
[1] CHIBA INST TECHNOL, NARASHINO, CHIBA 275, JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1984年 / 23卷 / 05期
关键词
D O I
10.1143/JJAP.23.L305
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:L305 / L307
页数:3
相关论文
共 22 条
[1]  
DANIELS J, 1976, PHILIPS RES REP, V31, P544
[2]   CURRENT - VOLTAGE CHARACTERISTICS AND CAPACITANCE OF SINGLE GRAIN-BOUNDARIES IN SEMICONDUCTING BATIO3 CERAMICS [J].
GERTHSEN, P ;
HOFFMANN, B .
SOLID-STATE ELECTRONICS, 1973, 16 (05) :617-+
[3]  
GERTHSEN P, 1963, Z NATURFORSCH PT A, VA 18, P423
[4]   TRANSMISSION ELECTRON-MICROSCOPY AT GRAIN-BOUNDARIES OF PTC-TYPE BATIO3 CERAMICS [J].
HAANSTRA, HB ;
IHRIG, H .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1980, 63 (5-6) :288-291
[5]  
HAANSTRA HB, 1977, PHYS STATUS SOLIDI A, V39, P307
[6]  
HAAYMAN PW, Patent No. 714965
[7]  
HAAYMAN PW, Patent No. 929350
[8]   RESISTIVITY ANOMALY IN DOPED BARIUM TITANATE [J].
HEYWANG, W .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1964, 47 (10) :484-490
[9]   SYSTEMATIC EXPERIMENTAL AND THEORETICAL INVESTIGATION OF GRAIN-BOUNDARY RESISTIVITIES OF N-DOPED BATIO3 CERAMICS [J].
IHRIG, H ;
PUSCHERT, W .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (07) :3081-3088
[10]   VISUALIZATION OF THE GRAIN-BOUNDARY POTENTIAL BARRIERS OF PTC-TYPE BATIO3 CERAMICS BY CATHODOLUMINESCENCE IN AN ELECTRON-PROBE MICROANALYZER [J].
IHRIG, H ;
KLERK, M .
APPLIED PHYSICS LETTERS, 1979, 35 (04) :307-309