GROWTH RATES OF EPITAXIAL GALLIUM ARSENIDE

[1] CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (05) : 427 - 433

[2] GLASSNER A, ANL5750

[3] LYONS VJ, 1961, J ELECTROCHEM SOC, V108, pC177

[4] MOEST R, 1962, J ELECTROCHEM SOC, V109, P1065

[5] VAPOR GROWTH OF GALLIUM ARSENIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (12) : 1127 - 1130

[6] RICHMAN DD, COMMUNICATION

[7] VAPOR PHASE EQUILIBRIA FOR THE SYSTEMS - GAAS-GALX-ASY AND GA-GALX [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (10) : 963 - 968

[8] TAUSCH FW, 1962, MAY LOS ANG M SOC

[9] WILLIAMS FV, 1961, J ELECTROCHEM SOC, V108, pC177

[1] CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (05) : 427 - 433

[2] GLASSNER A, ANL5750

[3] LYONS VJ, 1961, J ELECTROCHEM SOC, V108, pC177

[4] MOEST R, 1962, J ELECTROCHEM SOC, V109, P1065

[5] VAPOR GROWTH OF GALLIUM ARSENIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (12) : 1127 - 1130

[6] RICHMAN DD, COMMUNICATION

[7] VAPOR PHASE EQUILIBRIA FOR THE SYSTEMS - GAAS-GALX-ASY AND GA-GALX [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (10) : 963 - 968

[8] TAUSCH FW, 1962, MAY LOS ANG M SOC

[9] WILLIAMS FV, 1961, J ELECTROCHEM SOC, V108, pC177