LASER-DEPOSITED YBA2CU3O7 FILMS ON SILICON WITH YTTRIA-STABILIZED ZIRCONIA BUFFER LAYERS

被引:7
作者
GOERKE, F [1 ]
机构
[1] UNIV HAMBURG,MIKROSTRUKTURZENTRUM,D-20355 HAMBURG,GERMANY
来源
PHYSICA C | 1995年 / 245卷 / 1-2期
关键词
D O I
10.1016/0921-4534(95)00086-0
中图分类号
O59 [应用物理学];
学科分类号
摘要
YBa2Cu3O7 films are grown on Si (100) using a buffer layer of yttria stabilized zirconia. For the preparation we use laser deposition with a pulsed KrF excimer laser. The influence of substrate temperature, oxygen pressure, laser repetition rate and film thickness on the electrical properties and the morphology is investigated. Typically, the resistance ratio R(300 K)/R(100 K) is greater than three and depends on the film thickness. We achieve critical temperatures above 85 K, resistivities at 100 K below 200 mu Omega cm, and critical current densities at 77 K in the range of 10(5) A/cm(2). The morphology reveals troughs besides droplets and outgrowths. The troughs inhibit crack formation in films with thicknesses in the range of 100 to 370 nm.
引用
收藏
页码:15 / 24
页数:10
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