NOVEL METHOD TO DETERMINE CAPTURE CROSS-SECTION ACTIVATION-ENERGIES BY DEEP-LEVEL TRANSIENT SPECTROSCOPY TECHNIQUES

被引：45

作者：

CRIADO, J

GOMEZ, A

CALLEJA, E

MUNOZ, E

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 08期

关键词：

D O I：

10.1063/1.99366

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：660 / 661

页数：2

共 8 条

[1] COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS [J].

CHAND, N ;

HENDERSON, T ;

KLEM, J ;

MASSELINK, WT ;

FISCHER, R ;

CHANG, YC ;

MORKOC, H .

PHYSICAL REVIEW B, 1984, 30 (08) :4481-4492

[2] DEEP LEVEL TRANSIENT SPECTROSCOPY SIGNATURE ANALYSIS OF DX CENTERS IN ALGAAS AND GAASP [J].

CRIADO, J ;

GOMEZ, A ;

MUNOZ, E ;

CALLEJA, E .

APPLIED PHYSICS LETTERS, 1986, 49 (26) :1790-1792

[3] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[4] DIRECT EVIDENCE FOR THE DX CENTER BEING A SUBSTITUTIONAL DONOR IN ALGAAS ALLOY SYSTEM [J].

MIZUTA, M ;

TACHIKAWA, M ;

KUKIMOTO, H ;

MINOMURA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (02) :L143-L146

[5]

MOONEY PM, 1986, DEFECTS SEMICONDUCTO, V10, P417

[6]

Pantelides S. T., 1986, DEEP CTR SEMICONDUCT, P489

[7] A SIMPLE CALCULATION OF THE DX CENTER CONCENTRATION BASED ON AN L-DONOR MODEL [J].

TACHIKAWA, M ;

MIZUTA, M ;

KUKIMOTO, H ;

MINOMURA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (10) :L821-L823

[8]

WANG AC, 1984, J APPL PHYS, V57, P4645

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