POSITRON DIFFUSION IN GERMANIUM

被引：46

作者：

JORCH, HH

LYNN, KG

MCMULLEN, T

机构：

[1] BROOKHAVEN NATL LAB,DEPT PHYS,UPTON,NY 11973

[2] MEM UNIV NEWFOUNDLAND,DEPT PHYS,ST JOHNS A1B 3X7,NEWFOUNDLAND,CANADA

来源：

PHYSICAL REVIEW B | 1984年 / 30卷 / 01期

关键词：

D O I：

10.1103/PhysRevB.30.93

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：93 / 105

页数：13

共 56 条

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[7]

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[8]

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[9] POSITRON LIFETIME MEASUREMENTS IN N-TYPE AND P-TYPE SILICON [J].

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[10] THE POSITIVE MUON AS A SMALL POLARON [J].

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