CHARGE-STATE-DEPENDENT IRON PRECIPITATION IN SILICON

被引：10

作者：

MESLI, A

HEISER, T

AMROUN, N

SIFFERT, P

机构：

[1] Laboratoire PHASE (UPR du CNRS no 292), F-67037 Strasbourg Cedex, 23, Rue du Loess

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 18期

关键词：

D O I：

10.1063/1.104005

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The kinetics of interstitial iron precipitation in p-type silicon are investigated. During annealing, the iron charge state is controlled by the applied reverse voltage and its effect on the precipitation is studied. We observe that iron in the neutral charge state (Fe0i) precipitates preferentially in three-dimensional nucleation centers while Fe+ivanishes in the dislocation lines (rod-like nucleation centers). These centers are created during the fast cooling procedure necessary to dissolve iron in the silicon matrix.

引用

页码：1898 / 1900

页数：3

共 13 条

[1] KINETICS OF MIGRATION OF POINT DEFECTS TO DISLOCATIONS [J].