FEMTOSECOND TRANSIENT REFLECTIVITY MEASUREMENTS AS A PROBE FOR PROCESS-INDUCED DEFECTS IN SILICON

被引：23

作者：

ESSER, A

KUTT, W

STRAHNEN, M

MAIDORN, G

KURZ, H

机构：

[1] Institute for Semiconductor Electronics, RWTH Aachen

来源：

APPLIED SURFACE SCIENCE | 1990年 / 46卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(90)90187-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report a new technique of time-resolved reflectivity measurements with ultrashort laserpulses to detect electrically active defects in silicon. Quantitative information about defect densities are based on the temporal evolution of reflectivity changes caused by a photoinduced free-carrier plasma. In the case of ion implantation, structural damage and defect densities can be monitored over 5 orders of magnitude of implantation dose. © 1990.

引用

页码：446 / 450

页数：5

共 7 条

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[2] ULTRAFAST RECOMBINATION AND TRAPPING IN AMORPHOUS-SILICON [J].

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