ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE

[1] ABSORPTION SPECTRUM OF GERMANIUM AND ZINC-BLENDE-TYPE MATERIALS AT ENERGIES HIGHER THAN FUNDAMENTAL ABSORPTION EDGE [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (04) : 813 - &

[2] OPTICAL STUDIES OF BAND STRUCTURE OF INP [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (05) : 958 - &

[3] CARDONA M, 1964, P INT C PHYS SEMICON, P181

[4] HIGH-SENSITIVITY PIEZOREFLECTIVITY [J]. PHYSICAL REVIEW LETTERS, 1965, 14 (26) : 1069 - +

[5] DEPENDENCE OF OPTICAL CONSTANTS OF SILICON ON UNIAXIAL STRESS [J]. PHYSICAL REVIEW LETTERS, 1965, 15 (04) : 142 - &

[6] FIELD EFFECT OF REFLECTANCE IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1965, 15 (03) : 104 - &

[7] OPTICAL FIELD EFFECT IN SILICON [J]. PHYSICAL REVIEW, 1965, 140 (5A): : 1716 - &

[8] FRANZ-KELDYSH EFFECT ABOVE FUNDAMENTAL EDGE IN GERMAINIUM [J]. PHYSICAL REVIEW LETTERS, 1965, 14 (05) : 138 - &

[9] ELECTRIC FIELD INDUCED LIGHT ABSORPTION IN CDS [J]. PHYSICAL REVIEW, 1960, 117 (06): : 1487 - 1490

[1] ABSORPTION SPECTRUM OF GERMANIUM AND ZINC-BLENDE-TYPE MATERIALS AT ENERGIES HIGHER THAN FUNDAMENTAL ABSORPTION EDGE [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (04) : 813 - &

[2] OPTICAL STUDIES OF BAND STRUCTURE OF INP [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (05) : 958 - &

[3] CARDONA M, 1964, P INT C PHYS SEMICON, P181

[4] HIGH-SENSITIVITY PIEZOREFLECTIVITY [J]. PHYSICAL REVIEW LETTERS, 1965, 14 (26) : 1069 - +

[5] DEPENDENCE OF OPTICAL CONSTANTS OF SILICON ON UNIAXIAL STRESS [J]. PHYSICAL REVIEW LETTERS, 1965, 15 (04) : 142 - &

[6] FIELD EFFECT OF REFLECTANCE IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1965, 15 (03) : 104 - &

[7] OPTICAL FIELD EFFECT IN SILICON [J]. PHYSICAL REVIEW, 1965, 140 (5A): : 1716 - &

[8] FRANZ-KELDYSH EFFECT ABOVE FUNDAMENTAL EDGE IN GERMAINIUM [J]. PHYSICAL REVIEW LETTERS, 1965, 14 (05) : 138 - &

[9] ELECTRIC FIELD INDUCED LIGHT ABSORPTION IN CDS [J]. PHYSICAL REVIEW, 1960, 117 (06): : 1487 - 1490