A MULTIPLE PASS APPLICATION OF THE BOLTZMANN TRANSPORT-EQUATION FOR CALCULATING ION-IMPLANTATION PROFILES AT LOW ENERGIES

被引:25
作者
GILES, MD
GIBBONS, JF
机构
来源
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 209卷 / MAY期
关键词
D O I
10.1016/0167-5087(83)90778-0
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:33 / 36
页数:4
相关论文
共 8 条
[1]   AN APPLICATION OF THE BOLTZMANN TRANSPORT-EQUATION TO ION RANGE AND DAMAGE DISTRIBUTIONS IN MULTILAYERED TARGETS [J].
CHRISTEL, LA ;
GIBBONS, JF ;
MYLROIE, S .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) :6176-6182
[2]   RECOIL RANGE DISTRIBUTIONS IN MULTILAYERED TARGETS [J].
CHRISTEL, LA ;
GIBBONS, JF ;
MYLROIE, S .
NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :187-198
[3]   STOICHIOMETRIC DISTURBANCES IN ION-IMPLANTED COMPOUND SEMICONDUCTORS [J].
CHRISTEL, LA ;
GIBBONS, JF .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :5050-5055
[4]   CHANNELING OF MEDIUM-MASS IONS THROUGH SILICON [J].
EISEN, FH .
CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :561-&
[5]  
LINDHARD J, 1963, MAT FYS MEDD DAN VID, V33, P14
[6]  
SIGMON TW, COMMUNICATION
[7]   LOW-ENERGY RANGE DISTRIBUTIONS OF B-10 AND B-11 IN AMORPHOUS AND CRYSTALLINE SILICON [J].
WACH, W ;
WITTMAACK, K .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 194 (1-3) :113-116
[8]   CALCULATIONS OF NUCLEAR STOPPING, RANGES, AND STRAGGLING IN LOW-ENERGY REGION [J].
WILSON, WD ;
HAGGMARK, LG ;
BIERSACK, JP .
PHYSICAL REVIEW B, 1977, 15 (05) :2458-2468