MOLECULAR-BEAM EPITAXY-GROWN PBSNTE PBEUSETE BURIED HETEROSTRUCTURE DIODE-LASERS

被引：7

作者：

FEIT, Z

KOSTYK, D

WOODS, RJ

MAK, P

机构：

[1] Laser Photonics Analytics Division, Bedford

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1990年 / 2卷 / 12期

关键词：

D O I：

10.1109/68.62010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Buried heterostructure (BH) PbSnTe-PbEuSeTe lasers with a PbSnTe active layer were fabricated for the first time using a two stage molecular beam epitaxy (MBE) growth procedure. Lasers with 4 mu-m wide and 0.65 mu-m thick buried Pb0.961Sn0.039Te active layer and Pb0.985Eu0.015Se0.02Te0.98 cladding layers were grown. Continuous wave (CW) operating temperature of 175 K was measured with cw threshold currents of 1.6 mA (20 K), 13.6 mA (80 K), and 195 mA (160K). Single mode operation with 3.0 cm-1 mode tuning was measured at 1639.8 cm-1 emission.

引用

页码：860 / 862

页数：3

共 7 条

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