NARROW LINEWIDTH (85 KHZ) OPERATION IN LONG CAVITY 1.5-MU-M-MQW DBR LASER

被引：14

作者：

KUNII, T

MATSUI, Y

HORIKAWA, H

KAMIJOH, T

NONAKA, T

机构：

[1] Research and Development Group, Oki Electric Industry Co., Ltd., Hachioji Tokyo, 193

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 09期

关键词：

SEMICONDUCTOR LASERS; DIODES;

D O I：

10.1049/el:19910430

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An extremely narrow linewidth of 85 kHz operation was obtained at 10 mM output power in a 2.16 mm long, 1.5-mu-m (MQW) DBR laser. This is the narrowest linewidth ever reported in a semiconductor laser diode without an external cavity.

引用

页码：691 / 692

页数：2

共 7 条

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TSUCHIYA, T
UOMI, K
CHINONE, N
HARADA, T
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (08) : 529 - 530
[6] LASING CHARACTERISTICS OF 1.5-1.6 MU-M GAINASP-INP INTEGRATED TWIN-GUIDE LASERS WITH 1ST-ORDER DISTRIBUTED BRAGG REFLECTORS
UTAKA, K
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[7] YAMAZAKI H, OFC 90 SAN FRANCISCO, V2, pPD33

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