VERTICAL CURRENT COMPONENTS IN INTEGRATED INJECTION LOGIC

被引：17

作者：

ELSAID, MH ^{[1
]}

ROULSTON, DJ ^{[1
]}

WATT, LAK ^{[1
]}

机构：

[1] UNIV WATERLOO,DEPT ELECT ENGN,WATERLOO N2L 3G1,ONTARIO,CANADA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 06期

关键词：

D O I：

10.1109/T-ED.1977.18796

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：643 / 647

页数：5

共 11 条

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[6]

Elsaid M. H., 1977, IEEE Transactions on Electron Devices, VED-24, P761, DOI 10.1109/T-ED.1977.18818

[7] SURFACE EFFECTS ON P-N JUNCTIONS - CHARACTERISTICS OF SURFACE SPACE-CHARGE REGIONS UNDER NON-EQUILIBRIUM CONDITIONS [J].

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FITZGERALD, DJ .

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[8] SIMPLIFIED COMPUTER-AIDED ANALYSIS OF DOUBLE-DIFFUSED TRANSISTORS INCLUDING 2-DIMENSIONAL HIGH-LEVEL EFFECTS [J].

ROULSTON, DJ ;

SEHGAL, J ;

CHAMBERL.SG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (06) :809-&

[9] MINORITY CARRIER INJECTION AND CHARGE STORAGE IN EPITAXIAL SCHOTTKY BARRIER DIODES [J].

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[10] TRANSPORT EQUATIONS IN HEAVY DOPED SILICON [J].

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DEMAN, HJ ;

MERTENS, RP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) :290-298

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