PLANAR INP/GAINASP/GAINAS BURIED-STRUCTURE AVALANCHE PHOTODIODE

被引：16

作者：

KOBAYASHI, M

YAMAZAKI, S

KANEDA, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 07期

关键词：

D O I：

10.1063/1.95395

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：759 / 761

页数：3

共 7 条

[1] OPTICAL-RESPONSE TIME OF IN0.53GA0.47AS/INP AVALANCHE PHOTO-DIODES [J].

FORREST, SR ;

KIM, OK ;

SMITH, RG .

APPLIED PHYSICS LETTERS, 1982, 41 (01) :95-98

[2] LIQUID-PHASE-EPITAXIAL GROWTH OF INP INGAASP INGAAS BURIED-STRUCTURE AVALANCHE PHOTODIODES [J].

KISHI, Y ;

YASUDA, K ;

YAMAZAKI, S ;

NAKAJIMA, K ;

UMEBU, I .

ELECTRONICS LETTERS, 1984, 20 (04) :165-167

[3]

SHIRAI T, 1983, ELECTRON LETT, V19, P583

[4] NEW INGAAS-INP AVALANCHE PHOTO-DIODE STRUCTURE FOR THE 1-1.6 MU-M WAVELENGTH REGION [J].

SUSA, N ;

NAKAGOME, H ;

MIKAMI, O ;

ANDO, H ;

KANBE, H .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (08) :864-870

[5] IONIZATION COEFFICIENTS MEASURED IN ABRUPT INP JUNCTIONS [J].

UMEBU, I ;

CHOUDHURY, ANMM ;

ROBSON, PN .

APPLIED PHYSICS LETTERS, 1980, 36 (04) :302-303

[6] INP INGAAS BURIED-STRUCTURE AVALANCHE PHOTODIODES [J].

YASUDA, K ;

KISHI, Y ;

SHIRAI, T ;

MIKAWA, T ;

YAMAZAKI, S ;

KANEDA, T .

ELECTRONICS LETTERS, 1984, 20 (04) :158-159

[7]

YASUDA K, 1984, ELECTRON LETT, V20, P373

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