IONIC MOBILITY AND ELECTRONIC JUNCTION MOVEMENT IN CUINSE2

Two electronic methods of following the migration of constituent species in CuInSe2, thermally and/or electrically driven, are examined. Electron beam-induced current measurements were used to trace the formation and progression of junctions into single-crystal p-type samples, which were heated in the presence of Cu and In sources. A diffusion coefficient of approximately 6×10-9cm2s-1 was calculated for Cu at 300°C, while that for In was some two times smaller. Potentiostatic current versus time measurements were performed on a sample at various temperatures between 18 and 100°C, and a diffusion coefficient of 2×10-8cm2s-1 was obtained for the mobile ionic species at 100°C.