ELECTROREFLECTANCE SPECTRA OF INGAAS/ALGAAS STRAINED QUANTUM-WELL STRUCTURES

被引：8

作者：

FRITZ, IJ

BRENNAN, TM

GINLEY, DS

机构：

[1] Sandia National Laboratories, Albuquerque

来源：

SOLID STATE COMMUNICATIONS | 1990年 / 75卷 / 04期

关键词：

D O I：

10.1016/0038-1098(90)90898-L

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Electroreflectance spectra in In0.17Ga0.13As/Al0.3Ga0.7As multiple strained quantum-well structures have anomalous features compared to spectra from similar GaAs/Al0.3Ga0.7As structures. The temperature and barrier-thickness dependences of these features suggest that they might possibly arise from electronic coupling between the quantum-well states and states caused by defects or impurities. © 1990.

引用

页码：289 / 292

页数：4

共 10 条

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