AN ACCEPTOR-LIKE ELECTRON TRAP IN GAAS RELATED TO NI

被引：10

作者：

BREHME, S ^{[1
]}

PICKENHAIN, R ^{[1
]}

机构：

[1] KARL MARX UNIV,DEPT SEMICOND PHYS,PHYS SECT,DDR-7010 LEIPZIG,GER DEM REP

来源：

SOLID STATE COMMUNICATIONS | 1986年 / 59卷 / 07期

关键词：

NICKEL AND ALLOYS;

D O I：

10.1016/0038-1098(86)90690-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have investigated an emission level at E//c-0. 40 ev in GaAs by DLTS. The photo cross section sigma //n**0 reveals a resonance due to an excited state of the involved impurity center. Tentatively we identify the level as related to 3d**9 configuration of the isolated Ni//G//a impurity. Two deep levels in the lower half of the band gap observed by ODLTS are discussed as possible candidates for the single acceptor level of Ni//G//a. As an alternative model a Ni-related complex is discussed.

引用

页码：469 / 471

页数：3

共 23 条

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