THE PERFORMANCE POTENTIAL OF P-N-P HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：11

作者：

SUNDERLAND, DA

DAPKUS, PD

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 12期

关键词：

D O I：

10.1109/EDL.1985.26262

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：648 / 651

页数：4

共 17 条

[1] DETERMINATION OF THE VALENCE-BAND DISCONTINUITY BETWEEN GAAS AND (AL,GA)AS BY THE USE OF P+-GAAS-(AL,GA)AS-P--GAAS CAPACITORS [J].

ARNOLD, D ;

KETTERSON, A ;

HENDERSON, T ;

KLEM, J ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1984, 45 (11) :1237-1239

[2]

ASBECK PM, 1982, IEEE ELECTRON DEVICE, V3, P366

[3] METHOD OF ESTIMATING DELAY IN SWITCHING CIRCUITS + FIGURE OF MERIT OF SWITCHING TRANSISTOR [J].

ASHAR, KG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (11) :497-&

[4]

BENEKING H, 1981, I PHYS C SER, V56, P385

[5] MONTE-CARLO INVESTIGATION OF TRANSIENT HOLE TRANSPORT IN GAAS [J].

BRENNAN, K ;

HESS, K ;

LAFRATE, GJ .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3632-3635

[6]

Casey H.C., 1973, ATOMIC DIFFUSION SEM, P351

[7] A PNP ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR [J].

CHAND, N ;

HENDERSON, T ;

FISCHER, R ;

KOPP, W ;

MORKOC, H ;

GIACOLETTO, LJ .

APPLIED PHYSICS LETTERS, 1985, 46 (03) :302-304

[8] MICROWAVE TRANSISTORS - THEORY AND DESIGN [J].

COOKE, HF .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (08) :1163-+

[9] GAAS-GAALAS HETEROJUNCTION TRANSISTOR FOR HIGH-FREQUENCY OPERATION [J].

DUMKE, WP ;

WOODALL, JM ;

RIDEOUT, VL .

SOLID-STATE ELECTRONICS, 1972, 15 (12) :1339-+

[10] HIGH-FREQUENCY CHARACTERISTICS OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

ITO, H ;

ISHIBASHI, T ;

SUGETA, T .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (06) :214-216

← 1 2 →