RECTIFYING DIODES WITH A METAL INTRINSIC SEMICONDUCTOR/SEMICONDUCTOR STRUCTURE USING POLYCRYSTALLINE DIAMOND FILMS

被引：7

作者：

MIYATA, K ^{[1
]}

KOBASHI, K ^{[1
]}

DREIFUS, DL ^{[1
]}

机构：

[1] KOBE STEEL USA INC, CTR ELECTR MAT, RES TRIANGLE PK, NC 27709 USA

来源：

关键词：

D O I：

10.1016/0925-9635(93)90281-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Rectifying diodes with a metal/intrinsic semiconductor/semiconductor structure formed by Al/undoped polycrystalline diamond/B-doped p-type polycrystalline diamond film were investigated. The undoped diamond/B-doped diamond bilayer films were grown by microwave plasma chemical vapor deposition. Good rectification ratios of 10(4)-10(5) at 5 V were obtained for atomic B concentrations between 1 x 10(18) and 1 x 10(19) cm-3 . A reverse-bias breakdown voltage in excess of 20 V was observed for an undoped diamond layer 0.4 mum thick. Furthermore, a rectification ratio of 10(3) at 5 V was obtained, even at 300-degrees-C. For comparison, metal/semiconductor diodes formed by Al/B-doped polycrystalline diamond film were fabricated, but only a non-linear non-rectifying behavior was observed.

引用

页码：1107 / 1111

页数：5

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