LOW-TEMPERATURE ANNEALING BEHAVIOR OF SE-IMPLANTED GAAS STUDIED BY HIGH-RESOLUTION RUTHERFORD BACKSCATTERING CHANNELING

被引：7

作者：

BHATTACHARYA, RS ^{[1
]}

PRONKO, PP ^{[1
]}

机构：

[1] WRIGHT STATE UNIV,DAYTON,OH 45435

来源：

关键词：

D O I：

10.1063/1.330681

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1804 / 1806

页数：3

共 4 条

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INADA, T
MAYER, JW
EISEN, FH
RHODES, CG
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 33 (02): : 85 - 89
[2] ION-IMPLANTATION AND LOW-TEMPERATURE EPITAXIAL REGROWTH OF GAAS
GRIMALDI, MG
PAINE, BM
NICOLET, MA
SADANA, DK
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 4038 - 4046
[3] LAU SS, 1978, THIN FILMS INTERDIFF, pCH12
[4] LOW-TEMPERATURE EPITAXIAL REGROWTH OF ION-IMPLANTED AMORPHOUS GAAS
WILLIAMS, JS
AUSTIN, MW
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (12) : 994 - 996