INTERFACE STRESS AT ZNSE/GAAS-CR HETEROSTRUCTURE

被引：11

作者：

FUJIWARA, Y ^{[1
]}

SHIRAKATA, S ^{[1
]}

NISHINO, T ^{[1
]}

HAMAKAWA, Y ^{[1
]}

FUJITA, S ^{[1
]}

机构：

[1] KYOTO UNIV,FAC ENGN,DEPT ELECT ENGN,SAKYO KU,KYOTO 606,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1986年 / 25卷 / 11期

关键词：

D O I：

10.1143/JJAP.25.1628

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1628 / 1632

页数：5

共 21 条

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[2]

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[5]

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[6]

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[7] CR-RELATED INTRACENTER LUMINESCENCE IN GAAS-CR [J].

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[8]

FUJIWARA Y, 1984, 16TH INT C SOL STAT, P177

[9]

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[10]

KAMATA A, 1985, 17TH C SOL STAT DEV, P233

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