OPTICAL-TRANSITIONS AND DISTRIBUTION OF LOCALIZED LEVELS IN ZNIN2S4

被引：17

作者：

HERNANDEZ, L ^{[1
]}

VIGIL, O ^{[1
]}

GONZALEZ, F ^{[1
]}

机构：

[1] UNIV HABANA,ESCUEL FIS,DEPT FIS SEMICONDUCTORES,HABANA,CUBA

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1976年 / 36卷 / 01期

关键词：

D O I：

10.1002/pssa.2210360103

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：33 / 37

页数：5

共 21 条

[1] PHOTOCONDUCTIVITY IN TERNARY SULFIDES [J].

BEUN, JA ;

NITSCHE, R ;

LICHTENSTEIGER, M .

PHYSICA, 1960, 26 (08) :647-649

[2]

Bonch-Bruevich V. L., 1973, Rivista del Nuovo Cimento, V3, P321, DOI 10.1007/BF02823165

[3] INTERBAND OPTICAL TRANSITIONS IN DISORDERED SEMICONDUCTORS [J].

BONCH-BRUEVICH, VL .

PHYSICA STATUS SOLIDI, 1970, 42 (01) :35-+

[4] SUBSOLIDUS PHASE RELATIONS IN ZNS-IN2S3 SYSTEM - 600 DEGREES C TO 1080 DEGREES C [J].

BOORMAN, RS ;

SUTHERLAND, JK .

JOURNAL OF MATERIALS SCIENCE, 1969, 4 (08) :658-+

[5] OPTICAL PROPERTIES OF A QUASI-DISORDERED SEMICONDUCTOR - ZNIN2S4 [J].

BOSACCHI, A ;

BOSACCHI, B ;

FRANCHI, S ;

HERNANDEZ, L .

SOLID STATE COMMUNICATIONS, 1973, 13 (11) :1805-1809

[6] PHOTOCONDUCTIVITY DECAY IN IMPERFECT CRYSTALS [J].

BUBE, RH ;

GROVE, WM ;

MURCHISON, RK .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (09) :3515-+

[7] DETERMINATION OF ELECTRON TRAPPING PARAMETERS [J].

BUBE, RH ;

DUSSEL, GA ;

HO, CT ;

MILLER, LD .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) :21-&

[8]

DONIKA FG, 1971, SOV PHYS CRYSTALLOGR, V15, P695

[9] TOWARD A UNIFIED THEORY OF URBACHS RULE AND EXPONENTIAL ABSORPTION EDGES [J].

DOW, JD ;

REDFIELD, D .

PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02) :594-+

[10]

Greenwood N.N., 1968, IONIC CRYSTALS LATTI

← 1 2 3 →