EFFECT OF SURFACE RECOMBINATION ON THE DECAY OF EXCESS MINORITY-CARRIERS IN SEMICONDUCTORS INDUCED BY FINELY FOCUSED PICOSECOND PULSED LASER-BEAMS

被引：13

作者：

IOANNOU, DE ^{[1
]}

GLEDHILL, RJ ^{[1
]}

机构：

[1] MIDDLESEX POLYTECH,MICROELECTR CTR,LONDON N11 2NQ,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 06期

关键词：

D O I：

10.1063/1.334188

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1797 / 1800

页数：4

共 12 条

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CONRADT, R .

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[3]

BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[4]

BOOKER GR, 1981, I PHYS C SER, V60, P215

[5]

BULLIS WM, 1968, NBS465 TECH NOT

[6] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J].

DZIEWIOR, J ;

SCHMID, W .

APPLIED PHYSICS LETTERS, 1977, 31 (05) :346-348

[7]

MAHER EF, 1983, I PHYS C SER, V67, P399

[8] MEASUREMENT OF AUGER RECOMBINATION IN SILICON BY LASER EXCITATION [J].

SVANTESSON, KG ;

NILSSON, NG .

SOLID-STATE ELECTRONICS, 1978, 21 (11-1) :1603-&

[9] EFFECT OF SURFACE RECOMBINATION ON THE TRANSIENT DECAY OF EXCESS CARRIERS PRODUCED BY SHORT WAVELENGTH LASER-PULSES [J].

TYAGI, MS ;

NIJS, JF ;

VANOVERSTRAETEN, RJ .

SOLID-STATE ELECTRONICS, 1982, 25 (05) :411-415

[10] MINORITY-CARRIER RECOMBINATION IN HEAVILY-DOPED SILICON [J].

TYAGI, MS ;

VANOVERSTRAETEN, R .

SOLID-STATE ELECTRONICS, 1983, 26 (06) :577-597

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