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AN INGAAS GAAS STRAINED-LAYER SINGLE-QUANTUM-WELL RING LASER WITH A REACTIVE ION-ETCHED TETRAGONAL CAVITY

被引：5
作者：
FANG, ZJ
SMITH, GM
FORBES, DV
COLEMAN, JJ
机构：
[1] Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Science
[2] Microelectronics Laboratory, Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801
[3] Microelectronics Laboratory, Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1995年 / 31卷 / 01期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1109/3.341706
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An InGaAs-GaAs-AlGaAs strained layer quantum-well ring laser with a tetragonal cavity consisting of one symmetric and one asymmetric corner reflector both fabricated by reactive ion etching is described. Two beams emit from one facet with inclined angles predicted by Snell's Law. An increase of the threshold with incident angle is observed. Longitudinal mode behavior and L-I characteristics, which indicate the presence of strong competition between clockwise and counter-clockwise traveling waves, are described.
引用
收藏
页码：44 / 48
页数：5
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