DEPOSITION AND ELECTRICAL CHARACTERIZATION OF VERY THIN SRTIO3 FILMS FOR ULTRA LARGE-SCALE INTEGRATED DYNAMIC RANDOM-ACCESS MEMORY APPLICATION

被引：74

作者：

HWANG, CS

PARK, SO

KANG, CS

CHO, HJ

KANG, HK

AHN, ST

LEE, MY

机构：

[1] Semiconductor R and D center, Samsung electronics Co.Ltd, Kiheung-eup

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 9B期

关键词：

THIN FILMS; SRTIO3; SPUTTERING; DEPLETION LAYER; LEAKAGE CURRENT; CAPACITANCE;

D O I：

10.1143/JJAP.34.5178

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SrTiO3 thin films are deposited on Pt/SiO2/Si substrates using RF magnetron sputtering in a temperature range from 200 degrees C to 600 degrees C. The film deposited at 600 degrees C shows the best dielectric property and leakage current characteristics due to its good crystallinity and stoichiometric composition. Dielectric constant of the film deposited at 600 degrees C decreases with decreasing thickness from 235 at 120 nm to 145 at 30 nm. Leakage current shows a constant value of about 30 nA/cm(2) at 1.6 V in a thickness range from 50 nm to 120 nm but increases rapidly to 5 mu A/cm(2) at 30 nm. The electrical properties of the films are explained by a model of thr Pt/SrTiO3/Pt capacitor based on the band structure.

引用

页码：5178 / 5183

页数：6

共 13 条

[1] BERNACKI SE, 1992, P MATER RES SOC S, V243, P135
[2] Koyama K., 1991, International Electron Devices Meeting 1991. Technical Digest (Cat. No.91CH3075-9), P823, DOI 10.1109/IEDM.1991.235298
[3] THICKNESS DEPENDENCE OF DC LEAKAGE CURRENT IN LEAD ZIRCONATE-TITANATE (PZT) MEMORIES
MELNICK, BM
SCOTT, JF
DEARAUJO, CAP
MCMILLAN, LD
[J]. FERROELECTRICS, 1992, 135 (1-4) : 163 - 168
[4] Scott J. F., 1992, Integrated Ferroelectrics, V1, P323, DOI 10.1080/10584589208215720
[5] SCOTT JF, 1992, 1992 P INT S INT FER, P356
[6] SCOTT JF, 1993, INTEGR FERROELECTR, V3, P129
[7] TAKEMURA K, 1994, JPN SOC APPL PHYS, P341
[8] TEOWEE G, 1993, P MATER RES SOC S, V310, P415
[9] VIJAY DP, 1992, ISAF 92 : PROCEEDINGS OF THE EIGHTH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, P408, DOI 10.1109/ISAF.1992.300724
[10] WAGMAN DD, 1958, SELECTED VALUES THER, P489

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