HIGH MOBILITY ALINAS/INP HIGH ELECTRON-MOBILITY TRANSISTOR STRUCTURES GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

We have grown single and double-channel AlInAs/InP modulation doped heterostructures with electron mobilities as high as 5000 and 27 000 cm2/V s at 300 and 77 K, respectively. The sheet electron concentrations for these structures range from 1.5 X 10(12) to 5 X 10(12) cm-2. The layers exhibit strong Shubnikov de Haas oscillations, from which we determined two-dimensional electron gas mobilities at 1.8 K of 40 000 cm2/V s. The electrical properties of the AlInAs/InP heterostructures are the best reported for any device structures with InP as the active layer material.