TEMPERATURE EFFECTS IN A RIPE REACTOR

被引：4

作者：

PETRI, R

FRANCOU, JM

INARD, A

HENRY, D

机构：

[1] CNET, CNS, F-38243 Meylan Cedex

来源：

MICROELECTRONIC ENGINEERING | 1991年 / 13卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(91)90133-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The capabilities of a new prototype etcher, the RIPE (Resonant Inductive Plasma Etcher) have been investigated with a modified substrate holder cooled by a flow of liquid nitrogen/nitrogen gas. Results concerning dry etching of silicon and resist material with, respectivelySF6 and O2 gas chemistry are presented. Experiments concentrate on the dependence of the profile on the temperature of the substrate (T) at low pressure (< 4-mu-bar).

引用

页码：459 / 462

页数：4

共 8 条

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