X-RAY CURVE CHARACTERIZATION OF HOMO-EPITAXIAL LAYERS ON SILICON DEPOSITED AFTER DC HYDROGEN CLEANING

被引:1
作者
DOMMANN, A
HERRES, N
DELLER, HR
NISSEN, HU
KRUGER, D
PIXLEY, RE
RAMM, J
机构
[1] FRAUNHOFER INST APPL SOLID STATE PHYS,D-79108 FREIBURG,GERMANY
[2] ETH ZURICH,FESTKORPERPHYS LAB,CH-8093 ZURICH,SWITZERLAND
[3] INST HALBLEITERPHYS,D-15204 FRANKFURT,GERMANY
[4] UNIV ZURICH,INST PHYS,CH-8001 ZURICH,SWITZERLAND
[5] BALZERS AG,FL-9496 BALZERS,LIECHTENSTEIN
关键词
D O I
10.1088/0022-3727/28/4A/028
中图分类号
O59 [应用物理学];
学科分类号
摘要
High-resolution x-ray diffraction is a non-destructive method with an extremely high strain sensitivity. It is shown that its sensitivity is high enough to detect the influence of very small degrees of contamination by oxygen at the interface and the influence of H-2 incorporation. Interference fringes due to the strain induced by 0.01 monolayer of oxygen between the substrate and epilayer can be observed and distinguished from the H-2 incorporation. Depending on the sample preparation, the fit of the x-ray rocking curve measurements is different. Therefore, it is possible to distinguish between interface contamination, which leads to a well-defined strain at the interface, and the strain induced by H-2 incorporation, which is smeared out over a large region. Secondary-ion mass spectrometry as well as the cross section transmission electron microscopy measurements were correlated with the high-resolution x-ray diffraction measurements. Additional Rutherford backscattering channelling measurements also confirmed these results.
引用
收藏
页码:A144 / A148
页数:5
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