EFFECT OF ELECTRON INTERACTION ON BAND-GAP OF EXTRINSIC SEMICONDUCTORS

被引：90

作者：

INKSON, JC ^{[1
]}

机构：

[1] CAVENDISH LAB, CAMBRIDGE CB3 0HE, ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1976年 / 9卷 / 07期

关键词：

D O I：

10.1088/0022-3719/9/7/009

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1177 / 1183

页数：7

共 28 条

[1]

AIGRAIN P, 1961, SELECTED CONSTANTS R

[2] BAND-GAP SHRINKAGE OF SEMICONDUCTORS [J].

AUVERGNE, D ;

CAMASSEL, J ;

MATHIEU, H .

PHYSICAL REVIEW B, 1975, 11 (06) :2251-2259

[3]

BONCHBRUEVICH VL, 1964, SOV PHYS-SOLID STATE, V6, P2016

[4] ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB [J].

BURSTEIN, E .

PHYSICAL REVIEW, 1954, 93 (03) :632-633

[5] CONCENTRATION-DEPENDENCE OF ABSORPTION-COEFFICIENT FOR N-TYPE AND P-TYPE GAAS BETWEEN 1.3 AND 1.6 EV [J].

CASEY, HC ;

SELL, DD ;

WECHT, KW .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) :250-257

[6] INTRABAND AND INTERBAND FREE-CARRIER ABSORPTION AND FUNDAMENTAL ABSORPTION EDGE IN N-TYPE INP [J].

DUMKE, WP ;

LORENZ, MR ;

PETTIT, GD .

PHYSICAL REVIEW B, 1970, 1 (12) :4668-&

[7] INFRARED ABSORPTION IN HEAVILY DOPED N-TYPE GERMANIUM [J].

HAAS, C .

PHYSICAL REVIEW, 1962, 125 (06) :1965-&

[8]

Hedin L., 1970, SOLID STATE PHYS, V23, P1, DOI DOI 10.1016/S0081-1947(08)60615-3

[9]

HILL DE, 1964, PHYS REV A, V133, P866

[10] INHOMOGENEOUS ELECTRON-GAS [J].

RAJAGOPAL, AK ;

CALLAWAY, J .

PHYSICAL REVIEW B, 1973, 7 (05) :1912-1919

← 1 2 3 →