STUDIES OF BLUE-GREEN LASER STRUCTURES WITH ASYMMETRIC AND PSEUDOMORPHIC ZNSE WAVE-GUIDES

被引：10

作者：

HOMMEL, D ^{[1
]}

KURTZ, E ^{[1
]}

BEHR, T ^{[1
]}

JAKOBS, A ^{[1
]}

JOBST, B ^{[1
]}

SCHOLL, S ^{[1
]}

SCHULL, K ^{[1
]}

BEYERSDORFER, V ^{[1
]}

LANDWEHR, G ^{[1
]}

CERVA, H ^{[1
]}

机构：

[1] SIEMENS AG,D-81739 MUNICH,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 138卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)90961-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The laser structures were grown in the 3M configuration with Cdx Zn1-xSe quantum well, ZnSe wave guide and ZnS0.06Se0. 94 cladding layers lattice matched to the n-type GaAs:Si substrate. Au-Ge contacts were applied to the GaAs backside and 30 μm Au stripes to the top of the p-ZnSSe:N layer. Carrier densities as measured by C-V profiling will be discussed as well as structural properties determined by high resolution X-ray diffraction reciprocal space mapping. A novel approach to prevent the formation of misfit dislocations within the active layer of such laser structures without using quaternary compounds is the growth of strained ZnSe wave guides. The thickness of the ZnSe at both sides of the quantum well was chosen as 70 nm in order to be below the critical thickness of 150 nm for ZnSe on GaAs. TEM studies of such quantum well and laser structures confirm the excellent crystalline quality. The active region of such laser structures is free of misfit dislocations. The optical confinement factor is 1.8% a value still above the one calculated for structures with partially relaxed wave guides.

引用

页码：1076 / 1076

页数：1