CARRIER TRANSPORT AT GRAIN-BOUNDARIES IN SEMICONDUCTORS

[1] AMELINCKS S, 1959, SOLID STATE PHYS, P362

[2] THE DIFFUSION CONSTANT, MOBILITY AND LIFETIME OF MINORITY CARRIERS IN GERMANIUM CONTAINING PARALLEL ARRAYS OF DISLOCATIONS [J]. PHILOSOPHICAL MAGAZINE, 1958, 3 (33): : 940 - 949

[3] AST DG, 1982, STRUCTURE 110 TILT B

[4] AST DG, 1980, EY76022899 CORN U MA

[5] AUBERT JJ, 1980, 3RD EC PHOT SOL EN C, P589

[6] BARDSLEY W, 1960, PROGR SEMICONDUCTORS, P157

[7] BARRET CS, 1952, STRUCTURE METALS CRY

[8] Etch-Pit Studies of Dislocations in Indium Antimonide [J]. JOURNAL OF MATERIALS SCIENCE, 1966, 1 (03) : 219 - 228

[9] BELL RL, 1957, J ELECTRON CONTR, V3, P455

[10] BISCONDI M, 1975, J PHYS PARIS S10, V36

[1] AMELINCKS S, 1959, SOLID STATE PHYS, P362

[2] THE DIFFUSION CONSTANT, MOBILITY AND LIFETIME OF MINORITY CARRIERS IN GERMANIUM CONTAINING PARALLEL ARRAYS OF DISLOCATIONS [J]. PHILOSOPHICAL MAGAZINE, 1958, 3 (33): : 940 - 949

[3] AST DG, 1982, STRUCTURE 110 TILT B

[4] AST DG, 1980, EY76022899 CORN U MA

[5] AUBERT JJ, 1980, 3RD EC PHOT SOL EN C, P589

[6] BARDSLEY W, 1960, PROGR SEMICONDUCTORS, P157

[7] BARRET CS, 1952, STRUCTURE METALS CRY

[8] Etch-Pit Studies of Dislocations in Indium Antimonide [J]. JOURNAL OF MATERIALS SCIENCE, 1966, 1 (03) : 219 - 228

[9] BELL RL, 1957, J ELECTRON CONTR, V3, P455

[10] BISCONDI M, 1975, J PHYS PARIS S10, V36