SELF-ALIGNED PASSIVATION ON COPPER INTERCONNECTION DURABILITY AGAINST OXIDIZING AMBIENT ANNEALING

被引：42

作者：

ITOW, H

NAKASAKI, Y

MINAMIHABA, G

SUGURO, K

OKANO, H

机构：

[1] ULSI Research Laboratories, Research and Development Center, Toshiba Corp., Saiwai-ku, Kawasaki 210

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 07期

关键词：

D O I：

10.1063/1.109849

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A self-aligned niobium (Nb) passivation method has been developed in order to improve the stability of copper (Cu) in an oxidizing ambient. A Cu/Nb/SiO2/(100)Si structure was annealed between 400 and 850-degrees-C for 30 min in a gas mixture of H-2 and N2. The underlying Nb diffused to the Cu surface and turned into its nitride at 750-degrees-C. The surface Nb nitride layer acted as a passivation layer against oxidation. The passivated Cu was found to retain its resistivity of 2.0 muOMEGA cm even after oxidation at 400-degrees-C for 30 min in a dry oxygen ambient.

引用

页码：934 / 936

页数：3

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