NOISE-ANALYSIS OF SILICON-CARBIDE JFETS

被引：10

作者：

FLATRESSE, P

OUISSE, T

机构：

[1] Laboratoire de Physique des Composants à Semiconducteurs (URA CNRS 840), ENSERG, 38016 Grenoble Cedex, 23, rue des Martyrs

来源：

SOLID-STATE ELECTRONICS | 1995年 / 38卷 / 05期

关键词：

D O I：

10.1016/0038-1101(95)98662-M

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The low frequency noise of silicon carbide junction field effect transistors has been systematically studied at room temperature and at T = 77 K. At room temperature, 1/f3/2 spectra are attributed to surface thermal noise induced by lumped thermal noise generators distributed along the surface, in a way similar to that of GaAs thin-film resistors. At 77 K, generation-recombination noise is observed, and shot noise originates from drain and source contacts.

引用

页码：971 / 975

页数：5

共 9 条

[1]

Levinshtein, Rumyantsev, Palmour, Tech. Phys. Lett., 19, (1993)

[2]

Pensl, Choyke, Physica B, 185, (1993)

[3]

Pouysegur, Graffeuil, Cazaux, Origin of 1/f<sup>3/2</sup>noise in GaAs thin-film resistors and MESFET's, IEEE Transactions on Electron Devices, 34 ED, (1987)

[4]

Kelner, Binari, Shur, Palmour, Electron. Lett., 27, (1991)

[5]

van der Ziel, Noise in Solid State Devices and Circuits, (1986)

[6]

Chertouk, Chovet, Clei, Noise in Physical Systems and 1/f Fluctuations, AIP Conf. Proc. N, 285, (1993)

[7]

Ouisse, Becourt, Jaussaud, Templier, J. appl. Phys., 75, (1994)

[8]

Singh, Rys, J. appl. Phys., 73, (1993)

[9]

van der Ziel, Noise in solid-state devices and lasers, Proceedings of the IEEE, 58, (1970)

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