STRUCTURE-COMPOSITION VARIATION IN RF-SPUTTERED FILMS OF GE CAUSED BY PROCESS PARAMETER CHANGES

被引：29

作者：

MESSIER, R ^{[1
]}

TAKAMORI, T ^{[1
]}

ROY, R ^{[1
]}

机构：

[1] PENN STATE UNIV,MAT RES LAB,UNIVERSITY PK,PA 16802

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1976年 / 13卷 / 05期

关键词：

Compendex;

D O I：

10.1116/1.569060

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SEMICONDUCTING GERMANIUM

引用

页码：1060 / 1065

页数：6

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