180NM X-RAY-LITHOGRAPHY WITH A HIGH-REPETITION-RATE LASER-PLASMA SOURCE

被引：4

作者：

TURCU, ICE

REEVES, CM

STEVENSON, JTM

ROSS, AWS

GUNDLACH, AM

PREWETT, P

ANASTASI, P

KOEK, B

MITCHELL, P

LAKE, P

机构：

[1] University of Edinburgh, Edinburgh, EH9 3JL, Mayfield Rd

[2] Wheatstone Physics Laboratory, King's College, Strand, London

[3] Leica Cambridge Ltd., Cambridge, CB1 3QH, Clifton Rd

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 27卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(94)00110-G

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The laser-plasma X-ray source at Rutherford Appleton Laboratory was operated at approximately 1 nm wavelength and 100mW average power for proximity printing of 180nm wide lines into 0.5 mum thick photoresist. The resist process was used to define the gate electrode into polysilicon.

引用

页码：295 / 298

页数：4