ZINC-OXIDE VARISTOR GAS SENSORS .1. EFFECT OF BI2O3 CONTENT ON THE H-2-SENSING PROPERTIES

被引:44
作者
LIN, FC
TAKAO, Y
SHIMIZU, Y
EGASHIRA, M
机构
[1] Department of Materials Science and Engineering, Faculty of Engineering, Nagasaki University, Nagasaki, 852
关键词
D O I
10.1111/j.1151-2916.1995.tb08661.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Current (I)-voltage (V) characteristics of porous ZnO varistors with different Bi2O3 content have been investigated in air as well as in H-2-air mixtures in the temperature range room temperature (RT)-600 degrees C. The I-V characteristics measured at RT remained unchanged in the presence of H-2, but the breakdown voltage clearly shifted to a lower electric field in the temperature range 400-600 degrees C. The breakdown voltage decreased with increasing H-2 concentration in air. The optimum amount of Bi2O3 for the largest decrease was found to be 1.0 mol%. Thus, ZnO varistors can be used as a new type of H-2 sensor. The results presented in this study also suggest the important role of excess oxygen ions existing at the ZnO-ZnO grain boundaries in developing the Schottky barrier as well as in the H-2-sensing mechanism of the varistors.
引用
收藏
页码:2301 / 2306
页数:6
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