ANALYSIS OF 2P53S, 3P, 3D AND 4S CONFIGURATIONS OF QUADRUPLY IONIZED SILICON (SI V)

被引：37

作者：

BRILLET, WUL ^{[1
]}

机构：

[1] OBSERV PARIS,DEPT ASTROPHYS FONDAMENTALE,F-92190 MEUDON,FRANCE

来源：

PHYSICA SCRIPTA | 1976年 / 13卷 / 05期

关键词：

D O I：

10.1088/0031-8949/13/5/005

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：289 / 292

页数：4

相关论文

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[7] REVISED ANALYSIS OF 2P53S, 3P, 3D, AND 4S CONFIGURATIONS OF TRIPLY IONIZED ALUMINUM (AL IV)
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